HOME > 論文 > 書誌詳細All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface QualityKeigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. ACS Applied Materials & Interfaces 12 [46] 51598-51606. 2020.https://doi.org/10.1021/acsami.0c13233 Open Access Materials Data Repository (MDR) NIMS著者永村 直佳谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセットMDRavailable All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality 作成時刻: 2020-12-02 03:00:18 +0900更新時刻: 2025-01-09 04:57:37 +0900
