HOME > Article > DetailAll 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface QualityKeigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. ACS Applied Materials & Interfaces 12 [46] 51598-51606. 2020.https://doi.org/10.1021/acsami.0c13233 Open Access Materials Data Repository (MDR) NIMS author(s)NAGAMURA, NaokaTANIGUCHI, TakashiWATANABE, KenjiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality Created at: 2020-12-02 03:00:18 +0900Updated at: 2025-02-10 04:57:24 +0900