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All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Keigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio.

ACS Applied Materials & Interfaces 12 [46] 51598-51606. 2020.

https://doi.org/10.1021/acsami.0c13233

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-12-02 03:00:18 +0900Updated at: 2024-05-01 04:28:47 +0900

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