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All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Keigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio.

ACS Applied Materials & Interfaces 12 [46] 51598-51606. 2020.

https://doi.org/10.1021/acsami.0c13233

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Created at: 2020-12-02 03:00:18 +0900 Updated at: 2025-12-20 04:54:04 +0900

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