Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.

Small 16 [47] 2004907. 2020.

https://doi.org/10.1002/smll.202004907

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作成時刻: 2020-12-02 03:00:18 +0900更新時刻: 2024-03-31 00:52:29 +0900

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