Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage | SAMURAI, NIMS Researchers Directory Service

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Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.

Small 16 [47] 2004907. 2020.

https://doi.org/10.1002/smll.202004907

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-12-02 03:00:18 +0900Updated at: 2024-05-01 04:48:03 +0900

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