HOME > Profile > HOSOI, Takuji
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
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Research papers TSV
2026
- Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe. Optical and electrical properties of nearly intrinsic GeSn wires on quartz fabricated by nucleation-controlled liquid-phase crystallization. Materials Science in Semiconductor Processing. 214 (2026) 110862 10.1016/j.mssp.2026.110862
Books TSV
Proceedings TSV
Presentations TSV
2026
- HOSOI, Takuji. Novel Gate Oxide Formation Approach Using Low-Temperature NO Oxynitridation for SiC MOSFETs. 249th ECS Meeting. 2026 Invited
- 染谷 満, 平井 悠久, 熊谷 直樹, 矢野 裕司, 磯部 高範, 細井 卓治, 渡部 平司. 量産プロセス適用可能なホットウォール酸化炉を用いたSiC-MOS界面へのCO2 POA効果の検証. 2026年第73回応用物理学会春季学術講演会. 2026
2025
- 志村 考功, HOSOI, Takuji, 小林 拓真, 渡部 平司. Optical Characteristics of Single-crystal GeSn Thin Wires Fabricated by Local Liquid Phase Crystallization. The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025). 2025 Invited
- HOSOI, Takuji. SiO2/SiC interface engineering via low temperature NO oxynitridation of SiC surface feasible with Si device fabrication equipment. The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025). 2025
- 香取 拓真, 細井 卓治. 低温NO酸窒化により形成した極薄SiO2/SiC界面特性評価. 第86回 応用物理学会 秋季学術講演会. 2025
- 森本 修太, 津田 龍之介, 細井 卓治. Ge窒化膜からの選択的窒素除去によるGeナノシート形成. 第86回 応用物理学会 秋季学術講演会. 2025