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Novel Gate Oxide Formation Approach Using Low-Temperature NO Oxynitridation for SiC MOSFETs
249th ECS Meeting. May 24, 2026-May 28, 2026. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2026-06-03 03:08:15 +0900 Updated at: 2026-06-03 03:08:15 +0900