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You can search NIMS articles by Clarivate ESI category (Materials Science, Physics, Chemistry, Engineering, Biology and etc.), title and terms from abstract.

Last updated: July 01, 2022

795 article(s) found. Sorted by publication dates. (Help)
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress. Japanese Journal of Applied Physics. 60 [SC] (2021) SCCM01 10.35848/1347-4065/abe685
  • Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura. Comparison of characteristics of thin-film transistor with In<sub>2</sub>O<sub>3</sub> and carbon-doped In<sub>2</sub>O<sub>3</sub> channels by atomic layer deposition and post-metallization annealing in O<sub>3</sub>. Japanese Journal of Applied Physics. 60 [3] (2021) 030903 10.35848/1347-4065/abde54
  • Mariana S. L. Lima, Takashi Aizawa, Isao Ohkubo, Takeaki Sakurai, Takao Mori. Improvement of power factor in the room temperature range of Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub>. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBF06 10.35848/1347-4065/abd9cd
  • Amir Zulkefli, Bablu Mukherjee, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Yutaka Wakayama. Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors. Japanese Journal of Applied Physics. 60 [SB] (2021) SBBH01 10.35848/1347-4065/abd2a0
  • Haolun Li, Susumu Fujiwara, Hiroaki Nakamura, Tomoko Mizuguchi, Ayako Nakata, Tsuyoshi Miyazaki, Shinji Saito. Structural change of damaged polyethylene by beta-decay of substituted tritium using reactive force field. Japanese Journal of Applied Physics. 60 [SA] (2021) SAAB06 10.35848/1347-4065/abbdc8
  • Masahiro Takahashi, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Hiroshi Amano. Impact of high-temperature implantation of Mg ions into GaN. Japanese Journal of Applied Physics. 59 [5] (2020) 056502 10.35848/1347-4065/ab8b3d
  • Ryota Ishii, Shinichi Shikata, Tokuyuki Teraji, Hisao Kanda, Hideyuki Watanabe, Mitsuru Funato, Yoichi Kawakami. Intrinsic exciton transitions of isotopically purified <sup>13</sup>C studied by photoluminescence and transmission spectroscopy. Japanese Journal of Applied Physics. 59 [1] (2020) 010903 10.7567/1347-4065/ab5b77
  • Takuya Kawazu. Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination. Japanese Journal of Applied Physics. 59 [12] (2020) 124003 10.35848/1347-4065/abc8a4
  • Qing Zhao, Tomohiro Abe, Chikako Moriyoshi, Sangwook Kim, Ayako Taguchi, Hiroki Moriwake, Hong-Tao Sun, Yoshihiro Kuroiwa. Charge order of bismuth ions and nature of chemical bonds in double perovskite-type oxide BaBiO3 visualized by synchrotron radiation X-ray diffraction. Japanese Journal of Applied Physics. 59 [9] (2020) 095505 10.35848/1347-4065/abb00d
  • Yoshihiro Irokawa. Effect of hydrogen on Pt/GaN Schottky diodes. Japanese Journal of Applied Physics. 59 [12] (2020) 120901 10.35848/1347-4065/abc65f
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