47278 article(s) found. Sorted by publication dates. (Help) | |
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Chonan Yasunori, Komiyama Takao, Onuki Jin, Urao Ryoichi, Kimura Takashi, Nagano Takahiro. Sn-Ag-(Cu)はんだとNi-Pフィルム接合境界の構造および接合強度におよぼすP濃度の影響. MATERIALS TRANSACTIONS. 43 [8] (2002) 1840-1846 10.2320/matertrans.43.1840 | |
Z. Q. Zou, Z. C. Dong, A. S. Trifonov, H. Nejo. Atomic resolution imaging of a single-crystal Cu(100) surface by scanning tunneling microscopy in ultrahigh vacuum at room tempe. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20 [4] (2002) 1567 10.1116/1.1495903 | |
Y.G. Chen, M. Hasegawa, H. Okushi, S. Koizumi, H. Yoshida, T. Sakai, N. Kobayashi. Electrical properties of graphite/homoepitaxial diamond contact. Diamond and Related Materials. 11 [3-6] (2002) 451-457 10.1016/s0925-9635(01)00684-7 | |
P. Dorozhkin, H. Nejoh, D. Fujita, Pavel, Dorozhkin, NEJO, Hitoshi. Low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer-scale objects. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20 [3] (2002) 1044 10.1116/1.1481756 | |
Jin Guangxi, Kimura Takashi, Gao Kewei, Hashimoto Kenki, Qiao Lijie. L10型TiAlとL12型(AlMn)3Tiの拡散実験により求めた1273-1473Kにおける相平衡. MATERIALS TRANSACTIONS. 43 [10] (2002) 2600-2603 10.2320/matertrans.43.2600 | |
Takatoshi Yamada, Atsuhito Sawabe, Satoshi Koizumi, Takaaki Kamio, Ken Okano. Growth of homoepitaxial diamond doped with nitrogen for electron emitter. Diamond and Related Materials. 11 [2] (2002) 257-261 10.1016/s0925-9635(01)00720-8 | |
Shin-ichi Kimura, Mitsuru Okuno, Hideki Iwata, Hideaki Kitazawa, Giyu Kido, Fumihiko Ishiyama, Osamu Sakai. Optical and magneto-optical studies on electronic structure of CeSb in the magnetically ordered states. Journal of the Physical Society of Japan. 71 [9] (2002) 2200-2207 10.1143/jpsj.71.2200 | |
Jeong-Hwan Song, Toyohiro Chikyow, Young-Zo Yoo, Parhat Ahmet, Hideomi Koinuma. Epitaxial Growth of the Wurtzite (11ar20) AlN Thin Films on Si(100) with MnS Buffer Layer. Japanese Journal of Applied Physics. 41 [Part 2, No. 11B] (2002) L1291-L1293 10.1143/jjap.41.l1291 | |
Y.-Z. Yoo, Zheng-Wu Jin, T. Chikyow, T. Fukumura, M. Kawasaki, H. Koinuma, 川崎雅司, YoungZu, Yoo, ZHENGWU, JIN, CHIKYOW, Toyohiro, T.Fukumura, 鯉沼秀臣. S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method. Applied Physics Letters. 81 [20] (2002) 3798-3800 | |
I. Ohkubo, C. Hirose, K. Tamura, J. Nishii, H. Saito, H. Koinuma, P. Ahemt, T. Chikyow, T. Ishii, S. Miyazawa, Y. Segawa, T. Fukumura, M. Kawasaki. Heteroepitaxial growth of beta-LiGaO2 thin films on ZnO. Journal of Applied Physics. 92 [9] (2002) 5587-5589 10.1063/1.1512311 | |