| 45796 article(s) found. Sorted by publication dates. (Help) | |
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| K Fujimoto. Preparation of hollandite-type KxGaxSn8-xO16 thin film and NO adsorption behavior. Solid State Ionics. 152-153 (2002) 769-775 10.1016/s0167-2738(02)00324-7 | |
| K Fujimoto. Preparation and characterization of hollandite thin film. Solid State Ionics. 151 [1-4] (2002) 141-146 10.1016/s0167-2738(02)00592-1 | |
| E Abe, A.P Tsai. Structure of a metastable Al3Ni decagonal quasicrystal: comparison with a highly-perfect Al72Ni20Co8. Journal of Alloys and Compounds. 342 [1-2] (2002) 96-100 10.1016/s0925-8388(02)00150-0 | |
| OHMURA, Takahito, TSUZAKI, Kaneaki, MATSUOKA, Saburo. Evaluation of the matirx strength of Fe-0.4%C tempered martensite using nanoindentation techniques. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES. 82 [10] (2002) 1903-1910 | |
| Sanguinetti S, Kuroda T, Gurioli M, Watanabe K, Gotoh Y, Minami F, KOGUCHI, Nobuyuki. Multiexcitonic effects in the carrier dynamics in single quantum dot. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 190 [2] (2002) 589-592 10.1002/1521-396x(200204)190:2<589::aid-pssa589>3.0.co;2-l | |
| Tohru Awane, 木村 隆, Jin Suzuki, Kenji Nishida, 石川 信博, 田沼 繁夫, 粟根 徹, 木村 隆, 鈴木仁, 西田 憲二, 石川 信博, 田沼 繁夫. 斜出射EPMA法によるステンレス鋼中の介在物の分析. Journal of Surface Analysis. 9 [2] (2002) 171-177 | |
| 平永良臣, 藤本健二郎, 我妻康夫, 長康雄, 寺部 一弥, 北村 健二. 非線形誘電率顕微鏡を用いたTbit/inch2の記録密度をもつ強誘電体記録. 電子情報通信学会技術研究報告. 102 [112] (2002) 13-17 | |
| S. Sanguinetti, K. Watanabe, T. Tateno, M. Wakaki, N. Koguchi, T. Kuroda, F. Minami, M. Gurioli. Role of the wetting layer in the carrier relaxation in quantum dots. Applied Physics Letters. 81 [4] (2002) 613-615 10.1063/1.1495525 | |
| S Sanguinetti, K Watanabe, T Kuroda, F Minami, Y Gotoh, N Koguchi. Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots. Journal of Crystal Growth. 242 [3-4] (2002) 321-331 10.1016/s0022-0248(02)01434-3 | |
| S. Sanguinetti, T. Mano, M. Oshima, T. Tateno, M. Wakaki, N. Koguchi. Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer. Applied Physics Letters. 81 [16] (2002) 3067-3069 | |
