Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-energy Continuous States | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-energy Continuous States

Takaaki Mano, Richard Nötzel, Qian Gong, Twan v. Lippen, Gerrit J. Hamhuis, Tom J. Eijkemans, Joachim H. Wolter.

Japanese Journal of Applied Physics 44 [9A] 6829-6832. 2005.

https://doi.org/10.1143/jjap.44.6829

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作成時刻: 2016-05-24 14:48:01 +0900更新時刻: 2024-03-30 01:52:03 +0900

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