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機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年04月26日

164件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Masatake Tsuji, Soshi Iimura, Junghwan Kim, Hideo Hosono. Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications. ACS Applied Materials & Interfaces. 14 [29] (2022) 33463-33471 10.1021/acsami.2c03673
  • Tomoyuki Yamasaki, Ryosei Takaoka, Soshi Iimura, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono. Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction. ACS Applied Materials & Interfaces. 14 [17] (2022) 19766-19773 10.1021/acsami.2c03483
  • Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio. Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN. ACS Applied Materials & Interfaces. 14 [22] (2022) 25659-25669 10.1021/acsami.2c03198
  • Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio. Current Injection into Single-Crystalline Carbon-Doped h-BN toward Electronic and Optoelectronic Applications. ACS Applied Materials & Interfaces. 14 [22] (2022) 25731-25740 10.1021/acsami.2c04544
  • Teodor K. Stanev, Pufan Liu, Hongfei Zeng, Erik J. Lenferink, Akshay A. Murthy, Nathaniel Speiser, Kenji Watanabe, Takashi Taniguchi, Vinayak P. Dravid, Nathaniel P. Stern. Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides. ACS Applied Materials & Interfaces. 14 [20] (2022) 23775-23784 10.1021/acsami.2c03652
  • Ken Sakaushi, Aoi Watanabe, Tomoaki Kumeda, Yasushi Shibuta. Fast-Decoding Algorithm for Electrode Processes at Electrified Interfaces by Mean-Field Kinetic Model and Bayesian Data Assimilation: An Active-Data-Mining Approach for the Efficient Search and Discovery of Electrocatalysts. ACS Applied Materials & Interfaces. 14 [20] (2022) 22889-22902 10.1021/acsami.1c21038
  • Binxi Liang, Anjian Wang, Jian Zhou, Shihao Ju, Jian Chen, Kenji Watanabe, Takashi Taniguchi, Yi Shi, Songlin Li. Clean BN-Encapsulated 2D FETs with Lithography-Compatible Contacts. ACS Applied Materials & Interfaces. 14 [16] (2022) 18697-18703 10.1021/acsami.2c02956
  • Yih-Ren Chang, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method. ACS Applied Materials & Interfaces. 14 [17] (2022) 19928-19937 10.1021/acsami.2c05534
  • Dipak Patel, Akiyoshi Matsumoto, Hiroaki Kumakura, Minoru Maeda, Su-Hun Kim, Hao Liang, Yusuke Yamauchi, Seyong Choi, Jung Ho Kim, Md. Shahriar A. Hossain. MgB2 Superconducting Joint Architecture with the Functionality to Screen External Magnetic Fields for MRI Magnet Applications. ACS Applied Materials & Interfaces. 14 [2] (2022) 3418-3426 10.1021/acsami.1c19581
  • Qiqi Zhang, Xin Chen, Zhongshan Yang, Tao Yu, Lequan Liu, Jinhua Ye. Precisely Tailoring Nitrogen Defects in Carbon Nitride for Efficient Photocatalytic Overall Water Splitting. ACS Applied Materials & Interfaces. 14 [3] (2022) 3970-3979 10.1021/acsami.1c19638
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