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Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
(Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN)

Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.
ACS Applied Materials & Interfaces 14 [22] 25659-25669. 2022.

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    作成時刻 :2022-07-13 03:14:37 +0900 更新時刻 :2022-07-15 03:17:18 +0900

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