Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
(Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN)

著者	Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.
掲載誌名	ACS Applied Materials & Interfaces 14 [22] 25659-25669 ISSN: 19448252, 19448244 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Chemical Society (ACS)
発表年	2022
言語	English
DOI	https://doi.org/10.1021/acsami.2c03198
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Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN(Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN)