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分野別にみる

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2022年08月13日

87件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Jian Wang, Satoshi Sugimoto, Shinya Kasai, Yukiko K Takahashi. Interlayer exchange coupling modulated all-optical magnetic switching in synthetic ferrimagnetic heterostructures. Journal of Physics D: Applied Physics. 53 [47] (2020) 475002 10.1088/1361-6463/ababd0
  • Takafumi D Yamamoto, Hiroyuki Takeya, Suguru Iwasaki, Kensei Terashima, Pedro Baptista de Castro, Takenori Numazawa, Yoshihiko Takano. Magnetic entropy change of ErAl2 magnetocaloric wires fabricated by a powder-in-tube method. Journal of Physics D: Applied Physics. 53 [9] (2020) 095004 10.1088/1361-6463/ab5c71
  • Thomas Scheike, Hiroaki Sukegawa, Tadakatsu Ohkubo, Kazuhiro Hono, Seiji Mitani. Comparative study of spin-dependent transport in Co2FeAl/MgAl2O4/CoFe magnetic tunnel junctions with and without thin CoFe interface insertion: an elastic and inelastic scattering model analysis. Journal of Physics D: Applied Physics. 53 [4] (2020) 045001 10.1088/1361-6463/ab50d0
  • Peng Wang, Wei Yi, Jun Chen, Shun Ito, Can Cui, Takashi Sekiguchi. Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence. Journal of Physics D: Applied Physics. 52 [47] (2019) 475103 10.1088/1361-6463/ab3b3e
  • Binbin Qian, Chaodeng Liu, Junmin Xu, Qingqing Sun, Huige Yang, Wentao Liu, Li Zhang, Takeo Minari, Xuying Liu, Jinzhou Chen. 3D cross-linking N-doped graphene framework for high sulfur nanocrystal storage. Journal of Physics D: Applied Physics. 52 [29] (2019) 295502 10.1088/1361-6463/ab182e
  • Karthik Krishnan, Masakazu Aono, Kazuya Terabe, Tohru Tsuruoka. Significant roles of the polymer matrix in the resistive switching behavior of polymer-based atomic switches. Journal of Physics D: Applied Physics. 52 [44] (2019) 445301 10.1088/1361-6463/ab35bf
  • J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C. Journal of Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
  • Bing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang. High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states. Journal of Physics D: Applied Physics. 52 [8] (2019) 085105 10.1088/1361-6463/aaf5ba
  • Ilia Valov, TSURUOKA, Tohru. Effects of moisture and redox reactions in VCM and ECM resistive switching memories. JOURNAL OF PHYSICS D-APPLIED PHYSICS. [41] (2018) 413001-1-413001-18
  • Zhenchao Wen, Takahide Kubota, Koki Takanashi. Optimization of half-Heusler PtMnSb alloy films for spintronic device applications. Journal of Physics D: Applied Physics. 51 [43] (2018) 435002 10.1088/1361-6463/aadf4e
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