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Al2O3/n-GaN界面での伝導帯/価電子帯近傍の界面準位密度に関する研究
(Study of interface state density near conduction/valence band at Al2O3/n-GaN interface)
膜・表面物理分科会、シリコンテクノロジー分科会. January 24, 2019-January 26, 2019.
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Created at: 2019-12-02 10:42:46 +0900Updated at: 2019-12-02 10:42:46 +0900