HOME > 論文 > 書誌詳細Bottom-electrode effect on switching behavior and interface reaction in nanoionic-based resistive changing memoryTakahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow. Japanese Journal of Applied Physics 55 [8S2] 08PC03. 2016.https://doi.org/10.7567/jjap.55.08pc03 NIMS著者長田 貴弘山下 良之吉川 英樹井村 将隆知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-07-11 14:08:52 +0900更新時刻: 2024-05-02 09:38:20 +0900
