HOME > Article > DetailBottom-electrode effect on switching behavior and interface reaction in nanoionic-based resistive changing memoryTakahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow. Japanese Journal of Applied Physics 55 [8S2] 08PC03. 2016.https://doi.org/10.7567/jjap.55.08pc03 NIMS author(s)NAGATA, TakahiroYAMASHITA, YoshiyukiYOSHIKAWA, HidekiIMURA, MasatakaCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-07-11 14:08:52 +0900Updated at: 2024-04-01 22:55:43 +0900