Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture

Yoshitaka Shingaya; Takuya Iwasaki; Ryoma Hayakawa; Shu Nakaharai; Kenji Watanabe; Takashi Taniguchi; Junko Aimi; Yutaka Wakayama; Yoshitaka Shingaya; Takuya Iwasaki; Ryoma Hayakawa; Shu Nakaharai; Kenji Watanabe; Takashi Taniguchi; Junko Aimi; Yutaka Wakayama

doi:10.1021/acsami.4c06116

Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture

Yoshitaka Shingaya, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Junko Aimi, Yutaka Wakayama.

ACS Applied Materials & Interfaces 16 [26] 33796-33805. 2024.

https://doi.org/10.1021/acsami.4c06116

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Introduction to new articles

Development of multifunctional in-memory logics with 2D materials and organic nano-floating gate.

In-memory logics were achieved by introducing an organic memory layer into a dual-gate antiambipolar transistor with heterojunction of transition metal dichalcogenides thin films. A reconfigurable logic circuit that can switch the type of logic operation by writing a charge to the memory layer was constructed. Furthermore, reconfigurable artificial synapses with the ability to switch operation modes have also been demonstrated. These results are expected to allow us explore new in-memory computing architectures with a view to realizing non-von Neumann-type computers.

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Created at: 2024-07-30 09:22:31 +0900 Updated at: 2026-10-25 04:31:32 +0900