HOME > 論文 > 書誌詳細Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitorsMasafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono. Microelectronic Engineering 216 111040. 2019.https://doi.org/10.1016/j.mee.2019.111040 NIMS著者生田目 俊秀弓削 雅津也大井 暁彦池田 直樹色川 芳宏岩井 秀夫安福 秀幸川田 哲小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-10-01 03:00:54 +0900更新時刻: 2024-04-02 01:24:40 +0900
