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Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Author(s)Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono.
Journal titleMicroelectronic Engineering 216 111040
ISSN: 01679317
ESI category: ENGINEERING
PublisherElsevier BV
Year of publication2019
LanguageEnglish
DOIhttps://doi.org/10.1016/j.mee.2019.111040
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