HOME > Article > DetailInfluence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitorsMasafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono. Microelectronic Engineering 216 111040. 2019.https://doi.org/10.1016/j.mee.2019.111040 NIMS author(s)NABATAME, ToshihideOHI, AkihikoIKEDA, NaokiIROKAWA, YoshihiroYASUFUKU, HideyukiKAWADA, SatoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-10-01 03:00:54 +0900 Updated at: 2026-09-06 04:41:43 +0900
