Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors
| 著者 | Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono. |
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| 掲載誌名 | Microelectronic Engineering 216 111040 ISSN: 01679317 ESIでのカテゴリ: ENGINEERING |
| 出版社 | Elsevier BV |
| 発表年 | 2019 |
| 言語 | English |
| DOI | https://doi.org/10.1016/j.mee.2019.111040 |
| この文献をMendeleyにインポート |  |