SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail

Al2O3/n-GaNキャパシタの酸化ガリウム界面層が電気特性へ及ぼす影響
(Influence of gallium oxide interfacial layer on electrical characteristics of Al2O3/n-GaN capacitors)

第65回応用物理学会春季学術講演会. 2018.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2018-03-24 22:38:09 +0900 Updated at :2018-06-05 14:17:31 +0900

    ▲ Go to the top of this page