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Study of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas

21st International Conference on Atomic Layer Deposition. 2021.

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    作成時刻: 2021-09-18 03:00:21 +0900更新時刻: 2021-09-18 03:00:21 +0900

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