HOME > Presentation > DetailStudy of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas生田目 俊秀, 井上 万里, 前田 瑛里香, 女屋 崇, 廣瀨 雅史, 小林 陸, 大井 暁彦, 池田 直樹, 塚越 一仁. 21st International Conference on Atomic Layer Deposition. June 27, 2021-June 30, 2021.NIMS author(s)NABATAME, ToshihideOHI, AkihikoIKEDA, NaokiTSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-09-18 03:00:21 +0900Updated at: 2021-09-18 03:00:21 +0900