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酸化物薄膜トランジスタにおけるCドープIn-Si-OとIn-Si-Oチャネルの信頼性の比較
(Comparison of reliability between carbon-doped In-Si-O and In-Si-O channel for oxide-TFT)
第22回電子デバイス界面テクノロジー研究会. January 19, 2017-January 21, 2017.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-09-27 11:29:27 +0900 Updated at: 2018-09-27 11:29:27 +0900