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ゲートバイアスストレスにおけるAl2O3パッシベーション層を用いたAl2O3/In-SI-O-C薄膜トランジスタの信頼性
(Reliability of Al2O3/In-Si-O-C thin-film transistors with an Al2O3 passivation layer under gate-bias stress)
AiMES 2018. September 30, 2018-October 04, 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-04-11 22:38:39 +0900Updated at: 2018-06-05 14:19:39 +0900