Effect of ZrO2-seed-layer on ferroelectricity of HfxZr1-xO2 thin film for memory applications
XXVI International Materials Research Congress. 2017.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-04-22 22:26:56 +0900更新時刻: 2018-06-05 14:08:15 +0900