| 224件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
|---|
| Takafumi Odani, Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa. Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy. physica status solidi (b). 261 [11] (2024) 2300584 10.1002/pssb.202300584 | |
| Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi. Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN. physica status solidi (RRL) – Rapid Research Letters. 18 [9] (2024) 2400074 10.1002/pssr.202400074 Open Access | |
| Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots. physica status solidi (a). 221 [13] (2024) 2300767 10.1002/pssa.202300767 Open Access | |
| Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 261 [5] (2024) 202400060 10.1002/pssb.202400060 | |
| Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo. No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method. physica status solidi (RRL) – Rapid Research Letters. 16 [10] (2022) 10.1002/pssr.202100574 | |
| Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 259 [10] (2022) 2200183 10.1002/pssb.202200183 | |
| Yoshiki Takagiwa, Kaoru Kimura. Reinvestigation of the Thermoelectric Properties of Fe‐Substituted Icosahedral Al–Pd–Re Quasicrystals. physica status solidi (a). 219 [16] (2022) 10.1002/pssa.202200073 | |
| Hanchen Shen, Kai Feng, Guangzhe Lu, Yoshio Sakka, Bin Lu. Comparative Investigation on Upconversion Luminescence Properties of Lu
2
O
3
:Er/Yb and Lu
2
O
2
S:Er/Yb Phosphors. physica status solidi (a). 218 [11] (2021) 2100014 10.1002/pssa.202100014 | |
| Shinnosuke Yasuoka, Takao Shimizu, Akinori Tateyama, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo. Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al
1−
x
Sc
x
)N Films Prepared by Sputtering Method. physica status solidi (a). 218 [17] (2021) 2100302 10.1002/pssa.202100302 | |
| Jun Chen, Wei Yi, Shun Ito, Takashi Sekiguchi. Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown
m
‐Plane GaN Substrate. physica status solidi (a). 218 [14] (2021) 2100175 10.1002/pssa.202100175 | |
