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NIMS Awardシンポジウム2026

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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年11月11日

1369件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. Normally-off HfO2-gated diamond field effect transistors. Applied Physics Letters. 103 [9] (2013) 092905 10.1063/1.4820143
  • M. Jo, Y. Ding, T. Noda, T. Mano, Y. Sakuma, K. Sakoda, L. Han, H. Sakaki. Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell. Applied Physics Letters. 103 [6] (2013) 061118 10.1063/1.4818510
  • Z. M. Wang, Zh. L. Cai, K. Zhao, X. L. Guo, J. Chen, W. Sun, Zh. X. Cheng, H. Kimura, B. W. Li, G. L. Yuan, J. Yin, Zh. G. Liu. In-situobservation of nanomechanical behavior arising from critical-temperature-induced phase transformation in Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3thin film. Applied Physics Letters. 103 [7] (2013) 071902 10.1063/1.4818121
  • Jun Li, Jie Yuan, Ya-Hua Yuan, Jun-Yi Ge, Meng-Yue Li, Hai-Luke Feng, Paulo J. Pereira, Akira Ishii, Takeshi Hatano, Alejandro V. Silhanek, Liviu F. Chibotaru, Johan Vanacken, Kazunari Yamaura, Hua-Bing Wang, Eiji Takayama-Muromachi, Victor V. Moshchalkov. Direct observation of the depairing current density in single-crystalline Ba0.5K0.5Fe2As2 microbridge with nanoscale thickness. Applied Physics Letters. 103 [6] (2013) 062603 10.1063/1.4818127
  • Satyajit Sahu, Subrata Ghosh, Kazuto Hirata, Daisuke Fujita, Anirban Bandyopadhyay. Multi-level memory-switching properties of a single brain microtubule. Applied Physics Letters. 102 [12] (2013) 123701 10.1063/1.4793995
  • Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Hisaya Oda, Kiyoshi Asakawa, Richard A. Hogg. Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source. Applied Physics Letters. 103 [5] (2013) 051121 10.1063/1.4817386
  • Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono. All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2on SrTiO3single crystal. Applied Physics Letters. 103 [7] (2013) 073110 10.1063/1.4818736
  • Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi. Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric. Applied Physics Letters. 103 [2] (2013) 023113 10.1063/1.4813537
  • Kazuhiro Hosono, Katsunori Wakabayashi. Dielectric environment effect on carrier mobility of graphene double-layer structure. Applied Physics Letters. 103 [3] (2013) 033102 10.1063/1.4813821
  • D. Gerlach, R. G. Wilks, D. Wippler, M. Wimmer, M. Lozac'h, R. Félix, A. Mück, M. Meier, S. Ueda, H. Yoshikawa, M. Gorgoi, K. Lips, B. Rech, M. Sumiya, J. Hüpkes, K. Kobayashi, M. Bär. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact. Applied Physics Letters. 103 [2] (2013) 023903 10.1063/1.4813448
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