HOME > 論文 > 書誌詳細Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric(Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric)Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi. Applied Physics Letters 103 [2] 023113. 2013.https://doi.org/10.1063/1.4813537 NIMS著者長田 実佐々木 高義塚越 一仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:06:21 +0900更新時刻: 2024-03-31 12:49:09 +0900