HOME > Article > DetailRealization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric(Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric)Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi. Applied Physics Letters 103 [2] 023113. 2013.https://doi.org/10.1063/1.4813537 NIMS author(s)OSADA, MinoruSASAKI, TakayoshiTSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:06:21 +0900Updated at: 2024-05-01 06:31:02 +0900