Realization of graphene field-effect transistor with high-κ HCa<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> nanoflake as top-gate dielectric | SAMURAI, NIMS Researchers Directory Service

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Realization of graphene field-effect transistor with high-κ HCa₂Nb₃O₁₀ nanoflake as top-gate dielectric
(Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric)

Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi.

Applied Physics Letters 103 [2] 023113. 2013.

https://doi.org/10.1063/1.4813537

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:06:21 +0900 Updated at: 2025-12-20 06:36:31 +0900

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