All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO<sub>2</sub>on SrTiO<sub>3</sub>single crystal | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO₂on SrTiO₃single crystal
(All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal)

Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono.

Applied Physics Letters 103 [7] 073110. 2013.

https://doi.org/10.1063/1.4818736

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作成時刻: 2016-05-24 17:07:01 +0900 更新時刻: 2025-05-13 06:54:05 +0900

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