All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO<sub>2</sub>on SrTiO<sub>3</sub>single crystal | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2on SrTiO3single crystal
(All-solid-state electric-double-layer transistor based on oxide ion migration in Gd-doped CeO2 on SrTiO3 single crystal)

Takashi Tsuchiya, Kazuya Terabe, Masakazu Aono.

Applied Physics Letters 103 [7] 073110. 2013.

https://doi.org/10.1063/1.4818736

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:07:01 +0900Updated at: 2024-03-31 12:49:13 +0900

▲ Go to the top of this page