HOME > 論文 > 書誌詳細Electron microscopy studies of the intermediate layers at the SiO2/GaN interfaceKazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, Yasuo Koide. Japanese Journal of Applied Physics 56 [11] 110312. 2017.https://doi.org/10.7567/jjap.56.110312 NIMS著者三石 和貴木本 浩司色川 芳宏鈴木 拓弓削 雅津也生田目 俊秀小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-11-22 21:06:37 +0900更新時刻: 2024-10-10 05:41:49 +0900
