HOME > 論文 > 書誌詳細High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectricYosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. APL Materials 6 [11] 111105. 2018.https://doi.org/10.1063/1.5055812 Open Access AIP Publishing (Publisher) NIMS著者笹間 陽介井村 将隆寺地 徳之渡邊 賢司谷口 尚内橋 隆山口 尚秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:40:21 +0900更新時刻: 2024-09-05 05:58:20 +0900
