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High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

APL Materials 6 [11] 111105. 2018.
Open Access AIP Publishing (Publisher)

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2019-03-01 11:40:21 +0900Updated at: 2024-05-01 05:27:09 +0900

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