HOME > Article > DetailHigh-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectricYosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. APL Materials 6 [11] 111105. 2018.https://doi.org/10.1063/1.5055812 Open Access AIP Publishing (Publisher) NIMS author(s)SASAMA, YosukeIMURA, MasatakaTERAJI, TokuyukiWATANABE, KenjiTANIGUCHI, TakashiUCHIHASHI, TakashiYAMAGUCHI, TakahideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-01 11:40:21 +0900Updated at: 2024-03-31 02:01:33 +0900
