High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
| Author(s) | Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. |
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| Journal title | APL Materials 6 [11] 111105 ISSN: 2166532X ESI category: MATERIALS SCIENCE |
| Publisher | AIP Publishing |
| Year of publication | 2018 |
| Language | English |
| DOI | https://doi.org/10.1063/1.5055812 |
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