Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy
(Bias induced Cu ion migration behavior in resistive change memory structure observed by hard x-ray photoelectron spectroscopy)

Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow.

Japanese Journal of Applied Physics 54 [6S1] 06FG01. 2015.

https://doi.org/10.7567/jjap.54.06fg01

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作成時刻: 2016-05-24 17:48:43 +0900更新時刻: 2024-04-01 23:25:21 +0900

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