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Diamond Field Effect Transistors by AlN/Diamond Heterostructure
(AlN／ダイヤモンドヘテロ構造を用いたダイヤモンドトランジスタ)

Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano.
Diamond and Related Materials 24 206-209. 2012.
https://doi.org/10.1016/j.diamond.2012.01.020

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    Created at: 2018-06-08 21:56:09 +0900 Updated at: 2026-04-28 04:59:43 +0900

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