HOME > Article > DetailDiamond Field Effect Transistors by AlN/Diamond Heterostructure(AlN/ダイヤモンドヘテロ構造を用いたダイヤモンドトランジスタ)Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano. Diamond and Related Materials 24 206-209. 2012.https://doi.org/10.1016/j.diamond.2012.01.020 NIMS author(s)IMURA, MasatakaHAYAKAWA, RyomaWATANABE, EiichiroNAGATA, TakahiroLIAO, MeiyongKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-06-08 21:56:09 +0900Updated at: 2024-05-02 09:09:09 +0900