HOME > 論文 > 書誌詳細Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors(Ga-In-Zn-O薄膜トランジスタにAl2O3層を形成した電気特性への影響)Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 [6] 061506. 2015.https://doi.org/10.1116/1.4928763 NIMS著者生田目 俊秀塚越 一仁大井 暁彦知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:51:56 +0900更新時刻: 2024-04-02 06:18:25 +0900