Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors | SAMURAI, NIMS Researchers Directory Service

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Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
(Ga-In-Zn-O薄膜トランジスタにAl2O3層を形成した電気特性への影響)

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 [6] 061506. 2015.

https://doi.org/10.1116/1.4928763

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:51:56 +0900 Updated at: 2025-04-20 06:09:45 +0900

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