ReS <sub>2</sub> /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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ReS ₂ /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe, Takashi Taniguchi, Shu Nakaharai, Yutaka Wakayama.

Advanced Electronic Materials 7 [1] 2000925. 2021.

https://doi.org/10.1002/aelm.202000925

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作成時刻: 2021-01-19 03:00:20 +0900 更新時刻: 2026-09-29 07:43:58 +0900

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