Bablu Mukherjee; Ryoma Hayakawa; Kenji Watanabe; Takashi Taniguchi; Shu Nakaharai; Yutaka Wakayama

doi:10.1002/aelm.202000925

ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

著者	Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe, Takashi Taniguchi, Shu Nakaharai, Yutaka Wakayama.
掲載誌名	Advanced Electronic Materials 7 [1] 2000925 ISSN: 2199160X ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2021
言語	English
DOI	https://doi.org/10.1002/aelm.202000925
この文献をMendeleyにインポート