HOME > 論文 > 書誌詳細ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and MemoryBablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe, Takashi Taniguchi, Shu Nakaharai, Yutaka Wakayama. Advanced Electronic Materials 7 [1] 2000925. 2021.https://doi.org/10.1002/aelm.202000925 NIMS著者早川 竜馬渡邊 賢司谷口 尚若山 裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-01-19 03:00:20 +0900更新時刻: 2024-03-31 15:33:42 +0900