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ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe, Takashi Taniguchi, Shu Nakaharai, Yutaka Wakayama.
Advanced Electronic Materials 7 [1] 2000925. 2021.
https://doi.org/10.1002/aelm.202000925

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    Created at: 2021-01-19 03:00:20 +0900Updated at: 2024-03-31 15:33:42 +0900

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