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水素＆アンモニア熱処理法によるアルミナ/ダイヤモンドpチャネル電界効果トランジスタ
(Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere)
IUMRS-International Conference on Electronic Material 2012. September 23, 2012-September 28, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:05:09 +0900 Updated at: 2017-09-08 21:22:40 +0900