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InGaAs/InAs/GaAs(111)A成長時の格子緩和機構
(Lattice relaxation mechanism during the growth of InGaAs/InAs/GaAs(111)A)
第77回応用物理学会秋季学術講演会. 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:52:51 +0900Updated at: 2017-07-10 22:26:23 +0900