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Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs
ICDCM 2015. September 06, 2015-September 12, 2015.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:11:53 +0900Updated at: 2017-07-10 22:14:15 +0900