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酸化物TFTのCドープInSiOチャネル材料の研究
(Study of C-doped InSiO as a novel channel material for oxide TFT)
46th IEEE Semiconductor Interface Specialists Conference. December 02, 2015-December 05, 2015.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:06:57 +0900 Updated at: 2017-07-10 22:13:40 +0900