酸化物TFTのCドープInSiOチャネル材料の研究
(Study of C-doped InSiO as a novel channel material for oxide TFT)
46th IEEE Semiconductor Interface Specialists Conference. 2015.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 11:06:57 +0900更新時刻: 2017-07-10 22:13:40 +0900