4H-SiC/SiO2 界面O2 酸化の第一原理シミュレーション　〜SiC(0001)Si 面と(000-1)C 面の違い〜
(First-Principles Molecular Dynamics Simulations of O2 Oxidation in 4H-SiC/SiO2 ~Differences between SiC(0001)Si and (000-1)C faces~)