HOME > Presentation > Detail
4H-SiC/SiO2 界面O2 酸化の第一原理シミュレーション 〜SiC(0001)Si 面と(000-1)C 面の違い〜
(First-Principles Molecular Dynamics Simulations of O2 Oxidation in 4H-SiC/SiO2 ~Differences between SiC(0001)Si and (000-1)C faces~)
応用物理学会秋季学術講演会. 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:08:34 +0900Updated at: 2018-06-05 13:59:26 +0900