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水素＋アンモニア熱処理により作製したアルミナ絶縁体/ダイヤモンドpチャネルFET
(Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen a)
International Conference on Diamond and Carbon Materials 2013. September 02, 2013-September 05, 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-26 20:41:47 +0900Updated at: 2017-12-27 21:24:53 +0900