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CドープしたInSiOチャネル材料の電気特性及び物性に及ぼすCの影響
(Influence of carbon on physical and electrical properties of C-doped InSiO channel)
ゲートスタック研究会. January 29, 2015-January 31, 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:08:57 +0900Updated at: 2018-06-05 13:40:21 +0900