(Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor)
225th ECS Meeting. 2014.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 11:22:08 +0900更新時刻: 2017-07-10 21:45:43 +0900